IXFH12N100P mosfets equivalent, polar hiperfet power mosfets.
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Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier
Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVD.
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High Power Density Easy to Mount Space Savings
20 μA 1.0 mA 1.05 Ω
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VGS = 10V, ID = 0.5
* ID25, N.
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