• Part: IXFH12N100P
  • Description: Polar HiPerFET Power MOSFETs
  • Manufacturer: IXYS
  • Size: 192.24 KB
Download IXFH12N100P Datasheet PDF
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Datasheet Summary

PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 12A 1.05Ω 300ns PLUS220 (IXFV) D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 12 24 6 750 15 463 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g PLUS220SMD (IXFV_S) D...