IXFH12N100P Overview
Key Features
- High Power Density Easy to Mount Space Savings 20 μA 1.0 mA 1.05 Ω z z z
- VGS = 10V, ID = 0.5
- VDSS, ID = 0.5
- ID25 Resistive Switching Times VGS = 10V, VDS = 0.5
- VDSS, ID = 0.5
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| TJ60S04M3L | Toshiba | MOSFETs |
| PDS4701 | Potens semiconductor | N+P Channel MOSFETs |
| QM3202S | UBIQ Semiconductor | Dual N-Ch 30V Fast Switching MOSFETs |